s ot - 3 23 plastic-encapsulate transistors ss8550 transistor ( pnp ) features ? high collector current ? complementary to ss805 0 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 40 v v ceo collector - emitter voltage - 25 v v ebo emitter - base voltage - 5 v i c collector current - 1.5 a p c collector power dissipation 2 00 mw r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 0 0 a , i e =0 - 40 v collector - emitter breakdown voltage v (br) c e o i c = - 0. 1 m a , i b =0 - 2 5 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 40 v, i e =0 - 1 00 n a collector cut - off current i c e o v c e = - 20 v, i b =0 - 100 n a emitter cut - off current i eb o v eb = - 5 v, i c =0 - 100 n a h fe (1) v ce = - 1 v, i c = - 100m a 120 400 dc current gain h fe (2) v ce = - 1 v, i c = - 800m a 40 collector - emitter saturation voltage v ce(sat) i c = - 800m a, i b = - 80 ma - 0.5 v base - emitter saturation voltage v b e(sat) i c = - 800m a, i b = - 80 ma - 1.2 v base - emitter voltage v b e v ce = - 1 v, i c = - 10m a - 1 v transition frequency f t v ce = - 10 v,i c = - 5 0 ma , f= 30 mhz 100 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 20 pf clas sification of h fe (1) rank l h j range 120 C 200 200 C 350 300 C 400 marking y2 so t C 3 23 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
